inchange semiconductor product specification silicon npn power transistors 2SC3679 description ? with to-3pn package ? high voltage switching transistor applications ? for switching regulator and general purpose applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 900 v v ceo collector-emitter voltage open base 800 v v ebo emitter-base voltage open collector 7 v i c collector current (dc) 5 a i cm collector current -peak 10 a i b base current (dc) 2.5 a p c collector power dissipation t c =25 ?? 100 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-3pn) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SC3679 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma ;i b =0 800 v v cesat collector-emitter saturation voltage i c =2a; i b =0.4a 0.5 v v besat base-emitter saturation voltage i c =2a ;i b =0.4a 1.2 v i cbo collector cut-off current v cb =800v ;i e =0 0.1 ma i ebo emitter cut-off current v eb =7v; i c =0 0.1 ma h fe dc current gain i c =2a ; v ce =4v 10 30 f t transition frequency i c =0.5a ; v ce =12v 6 mhz c ob collector output capacitance f=1mhz;v cb =10v 75 pf switching times t on turn-on time 1.0 | s t s storage time 5.0 | s t f fall time i c =2.0a i b1 =0.3a ,i b2 =-1a v cc =250v, r l =125 |? 1.0 | s
inchange semiconductor product specification 3 silicon npn power transistors 2SC3679 package outline fig.2 outline dimentions (unindicated tolerance: ? 0.10 mm)
inchange semiconductor product specification 4 silicon npn power transistors 2SC3679
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